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Frontiers of Supercomputing
Vol. 1, No. 2, Oct. 2018
Multiple Quantum Dot Tunneling in a Semiconductor, Its Wave Function and Probability Density | Patent Report
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This article has been retracted by International Computer Science and Engineering Society (ICSES) because of ethical misconduct, scientific distortion, or administrative error, and cannot be downloaded and used for any purpose based on the violation in ICSES Ethics in Publicationcall_made |
Retraction Note by the Editor-in-Chief
Highlights and Novelties
1. Quantum dot tunneling for single, double and triple low barriers was successfully performed.
2. Peaks of light packet while tunneling has been noted.
3. Remnants and last remnants of light packet has also been noted.
4. Performed Quantum tunneling for high barrier and quantum dot was repelled back.
5. Study of Quantum tunneling in semiconductor has been performed.
Manuscript Abstract
Light Emitting Diodes (LED) are semiconductor devices that emit light with a narrow spectral distribution when an electric current is applied. Wavelength of light emitted by the Light Emitting Diodes is a direct result of the band gap of the emissive layer comprising the quantum dot which in turn, related to the semiconductor composition. Quantum dots (also known as semiconductor nanocrystals) can be used as down converters applied onto short wavelength Light Emitting Diode (LED) chips and used to generate visible and infrared light these quantum dots are synthetic crystals and are so small that sometimes it is referred as “artificial atom” and their optical and electronic properties differ from small to large quantum dots. Their electronic properties determined by their size and color. Bigger quantum dots emit wavelength like red and smaller quantum dot emit wavelength like green. This paper discloses tunneling through barrier using quantum dot into a semiconductor with single, double and triple barriers. If barrier is too high quantum dot is repelled back and quantum dot tunneling cannot be performed.
Keywords
Quantum mechanics Quantum dots semiconductor artificial atom Quantum dot tunneling Light Emitting Diode (LED) Organic Light Emitting Diode (OLED)
Copyright and Licence
© Copyright was transferred to International Computer Science and Engineering Society (ICSES) by all the Authors. This manuscript is published in Open-Access manner based on the copyright licence of Creative Commons Attribution Non Commercial 4.0 International (CC BY-NC 4.0).
Cite this manuscript as
Manu Mitra, "Multiple Quantum Dot Tunneling in a Semiconductor, Its Wave Function and Probability Density," Frontiers of Supercomputing, vol. 1, no. 2, pp. 1-13, Oct. 2018.
For External Scientific Databeses
--BibTex--
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title="Multiple Quantum Dot Tunneling in a Semiconductor, Its Wave Function and Probability Density",
author="Manu Mitra",
journal="Frontiers of Supercomputing (FoS)",
volume="1",
number="2",
pages="1-13",
year="2018",
month="10",
day="30",
publisher= "International Computer Science and Engineering Society (ICSES)",
doi="",
url="http://www.i-cses.com/files/download.php?pID=160"}
--EndNote--
%0 Journal Article
%T Multiple Quantum Dot Tunneling in a Semiconductor, Its Wave Function and Probability Density
%A Manu Mitra
%J Frontiers of Supercomputing (FoS)
%V 1
%N 2
%P 1-13
%D 2018
%I International Computer Science and Engineering Society (ICSES)
%U http://www.i-cses.com/files/download.php?pID=160
%8 2018-10-30
%R
%@ 2467-298X
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Corresponding Author
Affiliation: University of Bridgeport, Bridgeport, United States
Tel: +91 9704735081
E-mail: 
Webpage: 
Biography: Alumnus of Electrical Engineering from University of Bridgeport.
